IndiumV3, Main, Repository, bibRecord, 000809

On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses

Identifieur interne : 000809 ( Main/Repository ); précédent : 000808; suivant : 000810

On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses

Auteurs : RBID : Pascal:14-0082228

Descripteurs français

Pascal (Inist)
- Arséniure d'indium, Semiconducteur III-V, Composé III-V, Superréseau, Interface, Epaisseur couche, Epitaxie jet moléculaire, Couche épitaxique, Condition opératoire, Détection IR, Diffraction RX, Microscopie électronique transmission, Accommodation réseau, Structure interface, Mesure température, Déplacement raie, Déplacement vers le rouge, Détecteur IR, 8105E, 6855J, 8115H, 6855A.

English descriptors

KwdEn :
- Epitaxial layers, III-V compound, III-V semiconductors, Indium arsenides, Infrared detection, Infrared detectors, Interface structure, Interfaces, Layer thickness, Mismatch lattice, Molecular beam epitaxy, Operating conditions, Red shift, Spectral line shift, Superlattices, Temperature measurement, Transmission electron microscopy, XRD.

Abstract

We report on the detailed epitaxial growth conditions for type-II InAs/GaSb superlattice (SL) structures designed for mid-wave infrared detection. The mismatch between the GaSb buffer and the SL is precisely controlled by engineering the InSb-like interfaces for fixed InAs and GaSb layer thicknesses in the SL. High resolution X-ray diffraction and cross-sectional high resolution transmission electron microscopy analyses were performed to determine the mismatch and the thicknesses. It was shown that the in-plane lattice mismatch to the GaSb buffer is inversely proportional to the interface thickness for the samples presented here. The effect of the interfaces on the structure was also confirmed by room temperature transmission measurements: features were red-shifted as the interface thickness is increased.

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Pascal:14-0082228

Le document en format XML

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<author><name sortKey="Arikan, Bulent" uniqKey="Arikan B">Bulent Arikan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Anadolu University, Physics Department, Yunusemre Campus</s1>
<s2>26470 Eskisehir</s2>
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<country>Turquie</country>
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<author><name sortKey="Korkmaz, Guven" uniqKey="Korkmaz G">Guven Korkmaz</name>
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<author><name sortKey="Suyolcu, Yusuf Eren" uniqKey="Suyolcu Y">Yusuf Eren Suyolcu</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Anadolu University, Graduate School of Sciences, Advanced Technologies Research Unit: Nanotechnology, Yunusemre Campus</s1>
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<author><name sortKey="Aslan, Bulent" uniqKey="Aslan B">Bulent Aslan</name>
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<term>Infrared detection</term>
<term>Infrared detectors</term>
<term>Interface structure</term>
<term>Interfaces</term>
<term>Layer thickness</term>
<term>Mismatch lattice</term>
<term>Molecular beam epitaxy</term>
<term>Operating conditions</term>
<term>Red shift</term>
<term>Spectral line shift</term>
<term>Superlattices</term>
<term>Temperature measurement</term>
<term>Transmission electron microscopy</term>
<term>XRD</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
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<term>Interface</term>
<term>Epaisseur couche</term>
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<term>Couche épitaxique</term>
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<term>Microscopie électronique transmission</term>
<term>Accommodation réseau</term>
<term>Structure interface</term>
<term>Mesure température</term>
<term>Déplacement raie</term>
<term>Déplacement vers le rouge</term>
<term>Détecteur IR</term>
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<term>6855J</term>
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<front><div type="abstract" xml:lang="en">We report on the detailed epitaxial growth conditions for type-II InAs/GaSb superlattice (SL) structures designed for mid-wave infrared detection. The mismatch between the GaSb buffer and the SL is precisely controlled by engineering the InSb-like interfaces for fixed InAs and GaSb layer thicknesses in the SL. High resolution X-ray diffraction and cross-sectional high resolution transmission electron microscopy analyses were performed to determine the mismatch and the thicknesses. It was shown that the in-plane lattice mismatch to the GaSb buffer is inversely proportional to the interface thickness for the samples presented here. The effect of the interfaces on the structure was also confirmed by room temperature transmission measurements: features were red-shifted as the interface thickness is increased.</div>
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<fA11 i1="02" i2="1"><s1>KORKMAZ (Guven)</s1>
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<fA11 i1="03" i2="1"><s1>SUYOLCU (Yusuf Eren)</s1>
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<fA14 i1="01"><s1>Anadolu University, Physics Department, Yunusemre Campus</s1>
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<fC01 i1="01" l="ENG"><s0>We report on the detailed epitaxial growth conditions for type-II InAs/GaSb superlattice (SL) structures designed for mid-wave infrared detection. The mismatch between the GaSb buffer and the SL is precisely controlled by engineering the InSb-like interfaces for fixed InAs and GaSb layer thicknesses in the SL. High resolution X-ray diffraction and cross-sectional high resolution transmission electron microscopy analyses were performed to determine the mismatch and the thicknesses. It was shown that the in-plane lattice mismatch to the GaSb buffer is inversely proportional to the interface thickness for the samples presented here. The effect of the interfaces on the structure was also confirmed by room temperature transmission measurements: features were red-shifted as the interface thickness is increased.</s0>
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On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses

On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri